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Storage

Media and RAM

Storage, often termed as the random access memory (RAM) is considered as a type of data storage that is being used in the systems and processes. A special feature of random access memory is that it can be accessed very easily. Without even having any access to the preceding bytes, one can have access to the memory (Alam, Tehranipoor and Guin, 2017). It is widely used in systems, servers, smartphones etc. RAM also comes in a wide variety. Whether it is the cheap or the slowest, fastest etc., there are various categories of the same. The fastest version of the storage is the DDR4. Although DDR5 has been announced as well but it has still not implemented. Some other RAM that are considered as efficient enough includes PNY Anarchy 16 GB, Corsair Vengeance Pro DDR3 2400MHz 16GB. These are one of the fastest storage and memory access.

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Media and Network Architecture

Scaling has also affected the designing of the memory. As there are various different types of memories and storage devices present and every single memory have their own specialised features. Actually the RAM is considered as the dynamic random access memory and the primary memory. Although the DRAM is cheap but is slow as well. For avoiding the effects of being slow, some static RAM is being built on the chip (Elmore and Fearey, 2015). This is then termed as level 1 cache. It is a part of random access memory only but it is being used for speeding up the memory. In actually, there are level 1, level 2 and level 3 cache memories in a system. These all are found on the processor chip of the specific system.

There are various types of RAM and each of them are discussed as following :

SDRAM

Synchronous dynamic random access memory that cannot be considered as an extension for the EDO DRAM. The speed of the SDRAM is observed to be 66 MHz. With the help of scalability, the overall frequency of the SDRAM can be estimated up to 133 MHz. Also, in some cases of higher frequencies, it can also lead up to 180 MHz. This is considered as a beneficial factor because in this, the processor gets even more faster. Also, various new and modified versions of the memory have been included as well.

DDR

DDR refers to the double data rate SDRAM. It helps in increasing the overall rate of data transfer to two times more of the actual one. Although this type of memory is considered as quite incompatible but is being widely used in various operations and services. Even it acts quite compatible with some types, but on the other hand, it acts very incompatible with the SDRAM.

RDRAM

RDRAM refers to the Rambus dynamic random access memory. It is being considered as a specialised factor that the companies can make use of in the consumer market. It is also classified as a serial memory technology. The whole designing of RDRAM is quite different because multiple number of channels have been included in the same so that the whole transmission of the data can be done in an effective and appropriate manner.

Memory speed

The initial speed of the SDRAM is being evaluated as 66 MHz. It is observed that when there seems an increase in the speed of the memory bus, the overall speed gets a sort of maximization and it gets high up to 100 MHz.

Backup and Recovery

The random access memory is being considered in the form of integrated circuits. There are various volatile types and a common example of this can be considered as the DRAM modules. There are various memories available, out of which are some volatile and some are non volatile. There is a opposite factor of RAM which is considered as SAM. SAM is termed as the serial access memory. A variety of information cells are being stored in the same. The actual storage is being done on a memory chip. The memory chip is also considered as an integrated circuit. The capacitor holds the whole data and information (Biringer, Vugrin and Warren, 2016.). There are two types of random access memory that are widely being used and these involve static dynamic access memory (SRAM) and dynamic random access memory (DRAM). The capacitor holds the charge and it can be high as well as low. A high charge is considered as 1 and a low charge is considered as a 0. Also, there is a switch as well and usually the transistor has to play the role of a switch. Both types of random access memory are considered as volatile. The memory is also structured and is divided into various number of elements. The memory cell is considered as the fundamental block of the memory. The speed of the RAM when starts increasing to a huge extent and is because of the forward movement, then it can be referred to as the recovery speed of the ram.

References

  • Alam, M., Tehranipoor, M.M. and Guin, U., 2017. TSensors Vision, Infrastructure and Security Challenges in Trillion Sensor Era.Journal of Hardware and Systems Security,1(4), pp.311-327.
  • Amin, S.M., 2015. Power and Energy Infrastructure: Cyber Security, Defense, and Resilience.Geo. J. Int'l Aff.,16, p.70.
  • Biringer, B., Vugrin, E. and Warren, D., 2016.Critical infrastructure system security and resiliency. CRC press.
  • Chang, K.C., Chang, T.C., Tsai, T.M., Zhang, R., Hung, Y.C., Syu, Y.E., Chang, Y.F., Chen, M.C., Chu, T.J., Chen, H.L. and Pan, C.H., 2015. Physical and chemical mechanisms in oxide-based resistance random access memory.Nanoscale research letters,10(1), p.120.
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